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參數(shù)資料
| 型號： | 2SK1918L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SK1918L |
2SK1918(L), 2SK1918(S)
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
I
AP
*
E
AR
*
Pch*
60
V
Gate to source voltage
±
20
25
V
Drain current
A
Drain peak current
1
100
A
Body to drain diode reverse drain current
25
A
Avalanche current
3
25
A
Avalanche energy
3
53
mJ
Channel dissipation
2
50
W
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Notes 1. PW
≤
10
μ
s, duty cycle
≤
1 %
2. Value at Tc = 25
°
C
3. Value at Tch = 25
°
C, Rg
≥
50
Tstg
–55 to +150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1918S | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1918 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1920 | Very High-Speed Switching Applications |
| 2SK1921 | Very High-Speed Switching Applications |
| 2SK1922 | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 820uF; Voltage: 6.3V; Case Size: 8x20 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1920-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 250V 4A TO-251 |
| 2SK192A-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK192A-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK192A-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK192A-Y(F) | 制造商:Toshiba 功能描述:Nch -18V 3mA to 7mA Bulk |
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