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參數(shù)資料
| 型號： | 2SK1905 |
| 元件分類： | JFETs |
| 英文描述： | 12 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220ML, FULL PACK-3 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 108K |
| 代理商： | 2SK1905 |
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Drain-Source On Resistance
4
AP72T02GH/J
0
3
6
9
12
010
20
30
Q G , Total Gate Charge (nC)
V
GS
,
Ga
te
to
S
o
u
rce
V
o
lta
g
e(V
)
V DS =10 V
V DS =15 V
V DS =20 V
I D =30 A
100
1000
10000
1
5
9
1317
2125
29
V DS , Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
1
10
100
1000
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
40
80
120
02468
V GS , Gate-to-Source Voltage (V)
I
D
,
Dra
in
Current
(
A
)
T j =175
o C
T j =25
o C
V DS =5V
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
No
rm
a
lized
T
herm
a
lResp
o
nse
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0
10
20
30
40
0
2040
6080
100
I D (A)
R
DS(ON)
(m
Ω
)
10V
4.5V
4.2V
3.8V
3.5V
3.2V
3V
2.8V
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PDF描述 |
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| 2SK1909SMP | 25 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1909 | 25 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1911 | 0.028 ohm, POWER, FET, TO-220AB |
| 2SK1918(S) | 0.06 ohm, POWER, FET |
| 2SK1918(S) | 0.06 ohm, POWER, FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1917 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1920-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 250V 4A TO-251 |
| 2SK192A-BL(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK192A-GR(F) | 制造商:Toshiba 功能描述:Bulk |
| 2SK192A-Y | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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