參數(shù)資料
型號: 2SK1880S
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應晶體管(不適用溝道MOSFET的)
文件頁數(shù): 5/8頁
文件大小: 51K
代理商: 2SK1880S
2SK1880(L), 2SK1880(S)
5
Pulse Test
0
4
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
20
D
V
D
16
12
8
4
I = 1.5 A
1 A
0.5 A
8
12
20
16
Static Drain to Source on State
Resistance vs. Drain Current
S
R
D
Drain Current I (A)
V = 10 V
0.1 0.2
0.5
1
2
5
100
0.05
50
20
10
5
2
1
Pulse Test
Static Drain to Source on State
Resistance vs. Temperature
S
R
D
20
16
12
8
4
I = 1 A
–40
Case Temperature Tc (°C)
0.5 A
0
40
80
120
160
Forward Transfer Admittance
vs. Drain Current
F
|
Drain Current I (A)
Tc = –25°C
75°C
5
2
1
0.5
0.2
0.1
0.05
25°C
Pulse Test
V = 20 V
0.02
0.05 0.1 0.2
0.5
1
2
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