參數(shù)資料
型號: 2SK1880
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 4/9頁
文件大小: 44K
代理商: 2SK1880
2SK1880(L), 2SK1880(S)
4
30
20
10
50
100
150
Case Temperature Tc (°C)
Power vs. Temperature Derating
C
0
D
Drain to Source Voltage V (V)
D
1ms
PW=10m 1sho)
100 s
μ
10 s
μ
Opeaioninths
aeai imted
b R (on
DS
Maximum Safe Operation Area
0.1
0.3
1
3
10
300 1000
Ta = 25°C
DCOpeaion(T =25C
10
3
1
0.3
0.1
0.03
0.01
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
D
D
V = 3.5 V
Drain to Source Voltage V (V)
10 V
5 V
4.5 V
4 V
10
20
30
40
50
Pulse Test
0
Typical Transfer Characteristics
V = 20 V
Pulse Test
D
D
2.0
1.6
1.2
0.8
0.4
2
Gate to Source Voltage V (V)
Tc = 25°C
–25°C
75°C
4
6
8
10
0
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