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參數(shù)資料
| 型號： | 2SK1837-E |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 500 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK1837-E |
2SK1837
REJ03G0979-0300 Rev.3.00 May 13, 2009
Page 4 of 6
Case Temperature TC (°C)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Forward Transfer Admittance
vs. Drain Current
Reverse
Recovery
Time
t
rr
(ns)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
Gate
to
Source
Voltage
V
GS
(V)
Drain Current ID (A)
Switching
Time
t
(ns)
Switching Characteristics
0.5
0.4
0.3
0.2
0.1
0
–40
0
40
80
120
160
Pulse Test
20 A
ID = 50 A
10 A
0.5
1
2
5
10
20
50
0.5
1
2
5
10
20
50
Tc = – 25
°C
25
°C
75
°C
VDS = 20 V
Pulse Test
0.5
1
2
5
10
20
50
10
20
50
100
200
500
1000
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
010
20
30
40
50
10
100
1000
10000
VGS = 0
f = 1 MHz
Ciss
Crss
0
80
160
240
320
400
100
200
300
400
500
0
4
8
12
16
20
250 V
400 V
250 V
100 V
VDS
VDD = 100 V
VDD = 400 V
VGS
ID = 50 A
0.5
1
2
5
10
20
50
100
200
500
1000
2000
5000
td (off)
tf
tr
td (on)
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK1838STR-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 250V 1A 3-Pin(2+Tab) DPAK(S) T/R |
| 2SK1839-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 30V 0.1A SOT323 |
| 2SK184-GR(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans JFET N-CH 6.5mA Si 3-Pin Mini |
| 2SK184-GRTPE4 | 制造商:Toshiba America Electronic Components 功能描述:LOW NOISE AUDIO AMPLIFIER - Tape and Reel |
| 2SK184-Y(F) | 制造商:Toshiba America Electronic Components 功能描述: |
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