參數(shù)資料
型號(hào): 2SK1835
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 6/9頁
文件大小: 57K
代理商: 2SK1835
2SK1835
6
5000
2000
1000
500
200
100
5
0.1
0.2
0.5
1
2
5
10
R
Reverse Drain Current I (A)
di / dt = 100 A / s
V = 0, Ta = 25°C
Body to Drain Diode Reverse
Recovery Time
1000
10000
100
10
10
20
30
40
50
Ciss
Coss
V = 0
f = 1 MHz
Drain to Source Voltage V
C
DS
Crss
0
Typical Capacitance vs. Drain
to Source Voltage
1000
800
600
400
200
0
40
80
120
160
200
0
4
8
12
16
20
D
D
I = 4 A
V = 600 V
400 V
250 V
250 V
V = 600 V
400 V
V
DS
V
GS
Gate Charge g (nc)
Q
G
G
Dynamic Input Characteristics
1000
500
200
100
50
20
10
0.05
0.1
0.2
0.5
1
2
5
tf
tr
td (off)
Drain Current I (A)
S
V = 10 V, duty 1 %
PW = 5 s
Switching Characteristics
td (on)
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