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參數(shù)資料
| 型號(hào)： | 2SK1828 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | 2-3F1F, SC-59, TO-236MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 305K |
| 代理商： | 2SK1828 |
2SK1828
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1828
High Speed Switching Applications
Analog Switch Applications
2.5 V gate drive
Low threshold voltage: Vth = 0.5~1.5 V
High speed
Enhancement-mode
Small package
Marking
Equivalent Circuit
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
20
V
Gate-source voltage
VGSS
10
V
DC drain current
ID
50
mA
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.)
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