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參數(shù)資料
| 型號(hào)： | 2SK1764TR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | UPAK-3 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | 2SK1764TR |
1.0
0.8
0.6
0.4
0.2
0
2
4
68
10
Gate to Source Voltage
V
(V)
GS
Drain
to
Source
Saturation
Voltage
V
(V)
DS
(on)
Pulse Test
I = 0.5A
D
2A
1A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5
2
1.0
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2
5
Pulse Test
V
= 4V
GS
10V
Static
Drain
to
Source
On
State
Resistance
R
(
)
DS
(on)
Drain Current I
(A)
D
Static Drain to Source On State
Resistance vs. Drain Current
1.0
0.8
0.6
0.4
0.2
–40
0
40
80
120
160
Case Temperature Tc (°C)
Static
Drain
to
Source
On
State
Resistance
R
(
)
DS
(on)
Pulse Test
I = 2A
D
2A
V
= 4V
GS
V
= 10V
GS
1A
0.5A
1A
0
Static Drain to Source On State
Resistance vs. Case Temperature
5
2
1.0
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1.0
2
5
Forward
Transfer
Admittance
|yfs|
(S)
V
= 10V
Pulse Test
Ta = 25°C
DS
Drain Current I
(A)
D
Forward Transfer Admittance vs.
Drain Current
2SK1764
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PDF描述 |
|---|---|
| 2SK1771TE85R | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 2SK1772HYTR-E | 1000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1775 | 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1775 | 1.6 ohm, POWER, FET |
| 2SK1784 | 12 A, 450 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1771(TE85L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R |
| 2SK1772-HY(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1773-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1KV 5A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK1775-E | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 8A TO-3P |
| 2SK177T1 | 制造商:NEC 功能描述:New |
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