參數(shù)資料
型號(hào)： 2SK1758
元件分類(lèi)： JFETs
英文描述： 2 A, 600 V, 4.2 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁(yè)數(shù)： 5/7頁(yè)
文件大小： 381K
代理商： 2SK1758
2SJ543
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
–60
—
V
I
D = –10mA, VGS = 0
Gate to source breakdown voltage V
(BR)GSS
±20
——V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
–10
AV
DS = –60 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
–1.0
—
–2.0
V
I
D = –1mA, VDS = –10V
Static drain to source on state
R
DS(on)
—
0.042
0.055
I
D = –10A, VGS = –10V
Note4
resistance
R
DS(on)
—
0.065
0.095
I
D = –10A, VGS = –4V
Note4
Forward transfer admittance
|y
fs|
1016—
S
I
D = –10A, VDS = –10V
Note4
Input capacitance
Ciss
—
1750
—
pF
V
DS = –10V
Output capacitance
Coss
—
800
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
180
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
16
—
ns
V
GS = –10V, ID = –10A
Rise time
t
r
—
100
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
230
—
ns
Fall time
t
f
—
140
—
ns
Body–drain diode forward voltage
V
DF
—
–1.0
—
V
I
F = –20A, VGS = 0
Body–drain diode reverse
recovery time
t
rr
—
100
—
ns
I
F = –20A, VGS = 0
diF/ dt =50A/
s
Note:
4. Pulse test
相關(guān)PDF資料
PDF描述
2SK1761-E 12 A, 250 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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