參數(shù)資料
型號: 2SK1670
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 4/6頁
文件大小: 33K
代理商: 2SK1670
2SK1670
4
120
80
40
0
50
100
150
Case Temperature T
C
(°C)
Power vs. Temperature Derating
C
1,000
100
3
0.1
10
100
1,000
Drain to Source Voltage V
DS
(V)
D
D
Maximum Safe Operation Area
300
1
1
3
30
300
Ta = 25°C
10
μ
s
100
μ
s
1ms
C
=25°C
Operation in this area
is limited by R
DS (on)
10
30
0.3
T
PW
P
DM
D =
T
PW
θ
ch–c (t) =
γ
(t) ·
θ
ch–c
θ
ch–c = 2.08°C/W, T
C
= 25°C
3
Pulse Width PW (s)
N
γ
S
1.0
0.1
0.3
D = 1
10
μ
0.03
0.01
100
μ
10 m
100 m
1
10
1 m
T
C
= 25°C
0.5
0.2
0.1
0.05
0.02
0.01
Normalized Transient Thermal Impedance vs. Pulse Width
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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