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參數(shù)資料
| 型號： | 2SK1653 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 45A條（?。﹟的SOT - 186 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 39K |
| 代理商： | 2SK1653 |
2SK1620(L), 2SK1620(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
150
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
10
A
Drain peak current
I
D(pulse)*
1
40
A
Body to drain diode reverse drain current
I
DR
10
A
Channel dissipation
Pch*
2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes
1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD600D | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600E | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600F | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600KD | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 |
| 2SD600KE | TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1656(A) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1657(T1B-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1657-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1657-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1658-T1-A | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 25 SC70 Cut Tape |
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