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參數(shù)資料
| 型號： | 2SK1636S |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 74K |
| 代理商： | 2SK1636S |
2SK1636(L), 2SK1636(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
250
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
A
V
DS = 200 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
—
0.22
0.27
I
D = 8 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
6.0
10.0
—
S
I
D = 8 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1250
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
510
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
85
—
pF
Turn-on delay time
t
d(on)
—
24
—
ns
I
D = 8 A, VGS = 10 V,
Rise time
t
r
—
85
—
ns
R
L = 3.75
Turn-off delay time
t
d(off)
—
110
—
ns
Fall time
t
f
—60
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
400
—
ns
I
F = 15 A, VGS = 0,
di
F/dt = 100 A/s
Note
1. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1636L | 15 A, 250 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1657-A | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1657 | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1657-A | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK1657-T2B | 100 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1636S(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1637(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1642 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1647L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1647STL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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