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參數(shù)資料
| 型號： | 2SK1622 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 16K |
| 代理商： | 2SK1622 |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————–
Drain to source breakdown
V
(BR)DSS
60
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
1.0
———————————————————————————————————————————
Static Drain to source on state
R
DS(on)
—
resistance
———————————
—
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
12
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn-on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn-off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body to drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
Symbol
Min
Typ
Max
Unit
Test Conditions
—
—
V
I
D
= 10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
250
μA
V
DS
= 50 V, V
GS
= 0
—
2.0
V
I
D
= 1 mA, V
DS
= 10 V
0.033
0.04
I
D
= 15 A, V
GS
= 10 V *
— — — — — — — — — — –
I
D
= 15 A, V
GS
= 4 V *
0.05
0.06
20
—
S
I
D
= 15 A, V
DS
= 10 V *
1400
—
pF
V
DS
= 10 V, V
GS
= 0,
720
—
pF
f = 1 MHz
220
—
pF
15
—
ns
I
D
= 15 A, V
GS
= 10 V,
130
—
ns
R
L
= 2
270
—
ns
180
—
ns
1.3
—
V
I
F
= 25 A, V
GS
= 0
135
—
ns
I
F
= 25 A, V
GS
= 0,
di
F
/dt = 50 A/μs
See characteristic curves of 2SK972.
2SK1622 L , 2SK1622 S
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1622L | Silicon N-Channel MOS FET |
| 2SK1622S | Silicon N-Channel MOS FET |
| 2SK1628 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1629 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK1636 | Silicon N-Channel MOS FET(N溝道MOSFET) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1626-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 450V 5A 3-Pin(3+Tab) TO-220FM Box |
| 2SK1629(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK163 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1636S(TR-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1637(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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