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參數(shù)資料
| 型號： | 2SK1620STL-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 150 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-83, LDPAK-3 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 2SK1620STL-E |
2SK1620(L), 2SK1620(S)
Rev.2.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
150
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
*1
40
A
Body to drain diode reverse drain current
IDR
10
A
Channel dissipation
Pch
*2
50
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
150
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
250
A
VDS = 120 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
4.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
—
0.12
0.15
ID = 5 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
4.0
7.0
—
S
ID = 5 A, VDS = 10 V *
3
Input capacitance
Ciss
—
1200
—
pF
Output capacitance
Coss
—
550
—
pF
Reverse transfer capacitance
Crss
—
85
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
20
—
ns
Rise time
tr
—
50
—
ns
Turn-off delay time
td(off)
—
70
—
ns
Fall time
tf
—
40
—
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body to drain diode forward voltage
VDF
—
1.2
—
V
IF = 10 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
220
—
ns
IF = 10 A, VGS = 0,
diF/dt = 50 A/
s
Note:
3. Pulse test
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