參數(shù)資料
型號: 2SK161-O
英文描述: Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
中文描述: 晶體管|場效應(yīng)| N溝道| 1mA的我(直)| SPAK
文件頁數(shù): 3/8頁
文件大?。?/td> 39K
代理商: 2SK161-O
2SK1620(L), 2SK1620(S)
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
150
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
±10
A
V
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
250
A
V
DS = 120 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
4.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source on state
resistance
R
DS(on)
0.12
0.15
I
D = 5 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
4.0
7.0
S
I
D = 5 A, VDS = 10 V *
1
Input capacitance
Ciss
1200
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
550
pF
f = 1 MHz
Reverse transfer capacitance
Crss
85
pF
Turn-on delay time
t
d(on)
20
ns
I
D = 5 A, VGS = 10 V,
Rise time
t
r
50
ns
R
L = 6
Turn-off delay time
t
d(off)
—70
ns
Fall time
t
f
—40
ns
Body to drain diode forward
voltage
V
DF
1.2
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
220
ns
I
F = 10 A, VGS = 0,
di
F/dt = 50 A/s
Note
1. Pulse test
See characteristic curves of 2SK740.
相關(guān)PDF資料
PDF描述
2SK161-Y TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SPAK
2SK1621(L) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1621(S) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-263AB
2SK1621L Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1621S
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