參數(shù)資料
型號: 2SK1590A-T1B-AT
元件分類: 小信號晶體管
英文描述: 200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: LEAD FREE, MINIMOLD, SC-59, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 488K
代理商: 2SK1590A-T1B-AT
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MOS FIELD EFFECT TRANSISTOR
2SK1590A
N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17875EJ1V0DS00 (1st edition)
Date Published January 2006 NS CP(K)
Printed in Japan
1990
FEATURES
Directly driven by ICs having a 5 V power source.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1590A-T1B-AT
2SK1590A-T2B-AT
SC-59 (Mini Mold)
Marking: G16
Remark “-AT” indicates Pb-free (This product does not contain
Pb in external electrode and other parts.). “-T1B”,
“-T2B” indicates the unit orientation (8 mm embossed
carrier tape, 3,000 pcs/reel).
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±200
mA
Drain Current (pulse)
Note
ID(pulse)
±400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
PACKAGE DRAWING (Unit: mm)
1: Source
2: Gate
3: Drain
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