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參數(shù)資料
| 型號： | 2SK1580 |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 144K |
| 代理商： | 2SK1580 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DATA SHEET
Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
1991
The mark
shows major revised points.
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.
FEATURES
Directly driven by ICs having a 3 V power supply.
Not necessary to consider driving current because of its high
input impedance.
Possible to reduce the number of parts by omitting the bias
resistor.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1580
SC-70 (SSP)
Marking: G13
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
16
±16
±100
±200
150
150
V
V
mA
mA
mW
°C
°C
55 to +150
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.1
±
0.1
1.25
±
0.1
2
±
0
0
±
0
3
Marking
2
1
0
+
0
0
0
+
0
0
0
0
0
0
0
+
0
0
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1583 | N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1584 | N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1585 | N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1586 | N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1587 | N-CHANNEL MOS FET FOR SWITCHING |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1580-T1-A | 制造商:Renesas Electronics 功能描述:Nch 16V 1A 10 SC70 Tape & Reel |
| 2SK1581 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FET FOR SWITCHING |
| 2SK1581-A | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK1581-T1B-A | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 16V 0.2A 3-Pin SC-59 T/R |
| 2SK1582 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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