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參數(shù)資料
| 型號： | 2SK1575 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET |
| 中文描述： | 硅N溝道場效應(yīng)晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SK1575 |
2SK1575
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
Pch*
1
180
V
Gate to source voltage
±20
V
Drain current
16
A
Channel dissipation
200
W
Channel temperature
Tch
150
°C
Storage temperature
Note:
1. Value at T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage*
1
V
(BR)DSS
180
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage*
1
V
(BR)GSS
±20
—
—
V
I
G
= ±100 μA, V
DS
= 0
Zero gate voltage drain current*
1
I
DSS
V
GS(off)
V
DS(on)
|y
fs
|
Ciss
—
—
1
mA
V
DS
= 140 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 4 A, V
GS
= 10 V*
2
I
D
= 3 A, V
DS
= 20 V*
2
V
= 5 V, V
DS
= 0
f = 1 MHz
Gate to source cutoff voltage*
1
0.5
—
2.0
V
Drain to source cutoff voltage*
1
—
3.8
6.0
V
Forward transfer admittance*
1
0.9
1.25
—
S
Input capacitance*
1
—
440
—
pF
Output capacitance*
1
Coss
—
75
—
pF
V
= 50 V, V
GS
= 0
f = 1 MHz
Reverse transfer capacitance*
1
Crss
—
0.5
—
pF
V
GD
= –50 V, f = 1 MHz
V
DS
= 80 V, I
DQ
= 0.2 A
f = 190 MHz, Pin = 10 W
Output Power
Po
180
220
—
W
Drain Efficiency
Notes: 1. Shows / unit FET
2. Pulse Test
η
D
—
65
—
%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1578 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Capacitor Microphone Applications |
| 2SK1578A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 100UA I(DSS) |
| 2SK1578B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 150UA I(DSS) |
| 2SK1578C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 210UA I(DSS) |
| 2SK1578D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 320UA I(DSS) |
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