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參數(shù)資料
| 型號： | 2SK1528L |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大小： | 60K |
| 代理商： | 2SK1528L |
2SK1528(L), 2SK1528(S)
4
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
1
20
10
5
2
1
0.5
0.2
0.1
0.05
3
10
30
100
300
100
s
1 ms
DC
Operation
(T
C =
25°C)
PW
=
10
ms
(1
Shot)
10
s
Ta = 25°C
Operation
in
this
area
is
limited
by
R
DS
(on)
3
Pulse Width PW (s)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1.0
0.1
0.3
10
0.03
0.01
100
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 2.08°C/W, T
C = 25°C
T
TC = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1528S | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1528S-E | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1528STL-E | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1529-Y | 10 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1529O | 10 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1528L-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1528S | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 900V 4A 3PIN LDPAK(S) - Rail/Tube |
| 2SK1528STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1528STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1529 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
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