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參數(shù)資料
| 型號(hào)： | 2SK1528(S) |
| 元件分類： | JFETs |
| 英文描述： | 4 ohm, POWER, FET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 43K |
| 代理商： | 2SK1528(S) |
2SK1528(L), 2SK1528(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
900
V
Gate to source voltage
V
GSS
±30
V
Drain current
I
D
4A
Drain peak current
I
D(pulse)*
1
10
A
Body to drain diode reverse drain current
I
DR
4A
Channel dissipation
Pch*
2
60
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at T
C =
25°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1528L | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1528S | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1528S-E | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1528STL-E | 4 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1529-Y | 10 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1528STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1528STR-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1529 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
| 2SK1529_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS) |
| 2SK1529_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Power Amplifier Application |
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