參數(shù)資料
型號: 2SK1521
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應晶體管
文件頁數(shù): 3/9頁
文件大小: 49K
代理商: 2SK1521
2SK1521, 2SK1522
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1521 V
(BR)DSS
2SK1522
450
V
I
D
= 10 mA, V
GS
= 0
breakdown voltage
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
±
10
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 25 A, V
GS
= 10 V *
1
Zero gate voltage
2SK1521 I
DSS
2SK1522
250
drain current
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
Static Drain to source 2SK1521 R
DS(on)
on state resistance
0.08
0.10
2SK1522
0.085
0.11
Forward transfer admittance
|yfs|
22
35
S
I
D
= 25 A, V
DS
= 10 V *
1
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
Input capacitance
Ciss
8700
pF
Output capacitance
Coss
2400
pF
Reverse transfer capacitance
Crss
235
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
85
ns
I
D
= 25 A, V
GS
= 10 V,
R
L
= 1.2
Rise time
250
ns
Turn-off delay time
600
ns
Fall time
250
ns
Body to drain diode forward
voltage
1.1
V
I
F
= 50 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
120
ns
I
F
= 50 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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相關代理商/技術參數(shù)
參數(shù)描述
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