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參數(shù)資料
| 型號(hào)： | 2SK1519-E |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PL, 3 PIN |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 118K |
| 代理商： | 2SK1519-E |
2SK1519, 2SK1520
REJ03G0948-0400 Rev.4.00 May 13, 2009
Page 5 of 6
50
2.0
Source to Drain Voltage VSD (V)
Reverse
Drain
Current
I
DR
(A)
40
0.4
0.8
1.6
0
20
30
0
10
1.2
Pulse Test
10 V
VGS = 0, –5 V
Reverse Drain Current vs.
Source to Drain Voltage
3
Pulse Width PW (S)
Normalized
Transient
Thermal
Impedance
γ S
(t)
1
0.1
0.3
D = 1
10
0.03
0.01
100
10 m
100 m
1
10
1 m
TC = 25°C
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot
Pul
se
Normalized Transient Thermal Impedance vs. Pulse Width
T
PW
PDM
D =
T
PW
θch–c (t) = γ
S (t) θch–c
θch–c = 0.625°C/W, T
C = 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T
Vout Monitor
VDD
30 V
=
.
RL
Waveforms
Vin
Vout
td (on)
10%
t r
t f
10%
90%
10%
90%
td (off)
90%
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PDF描述 |
|---|---|
| 2SK1572 | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1573 | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1623STL-E | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1664 | 2 A, 700 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1667 | 7 A, 250 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK152 | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:2SK152 |
| 2SK1520 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1520(E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK1520-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1521 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 50A 3PIN TO-3PL - Rail/Tube |
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