參數(shù)資料
型號(hào): 2SK1516
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場效應(yīng)晶體管
文件頁數(shù): 7/9頁
文件大小: 49K
代理商: 2SK1516
2SK1515, 2SK1516
7
Pulse Test
V
GS
= 0, –10 V
20
0.8
2.0
Source to Drain Voltage V
SD
(V)
R
D
16
0.4
1.2
1.6
8
12
Reverse Drain Current vs.
Source to Drain Voltage
0
4
10 V
15 V
3
γ
S
1.0
0.1
0.3
10
μ
0.03
0.01
100
μ
10 m
100 m
1
10
1 m
Normalized Transient Thermal Impedance vs. Pulse Width
Pulse Width PW (s)
T
C
= 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1 Shot Pulse
T
PW
P
DM
D =
T
PW
θ
ch–c (t) =
γ
(t) ·
θ
ch–c
θ
ch–c = 1.25°C/W, T
C
= 25°C
Switching Time Test Circuit
Vin Monitor
Vin
10 V
50
D.U.T.
Vout Monitor
R
L
V
=
Waveforms
Vin
t
d
(on)
10%
t
r
90%
Vout
10%
90%
90%
t
f
t
d
(off)
10%
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