參數(shù)資料
型號: 2SK1405
元件分類: JFETs
英文描述: 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PFM, 3 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 64K
代理商: 2SK1405
2SK1405
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
250
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
0.35
0.50
I
D = 8 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
9
14
S
I
D = 8 A, VDS = 10 V *
1
Input capacitance
Ciss
3150
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
780
pF
f = 1 MHz
Reverse transfer capacitance
Crss
110
pF
Turn-on delay time
t
d(on)
35
ns
I
D = 8 A, VGS = 10 V,
Rise time
t
r
120
ns
R
L = 3.75
Turn-off delay time
t
d(off)
240
ns
Fall time
t
f
100
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 15 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
140
ns
I
F = 15 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK1405 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1427 10 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1430 10 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1431 15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK1436 50 A, 100 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PML
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