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參數(shù)資料
| 型號： | 2SK1405 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 5/7頁 |
| 文件大小： | 51K |
| 代理商： | 2SK1405 |
2SK1405
5
2.0
40
160
Case Temperature T
C
(°C)
S
R
D
)
1.6
0.4
0
80
120
0
–40
0.8
1.2
Static Drain to Source on State
Resistance vs. Temperature
Pulse Test
I
D
= 20 A
10 A
5 A
V
GS
= 10 V
50
0.5
10
Drain Current I
D
(A)
10
1
1
5
5
2
0.2
2
F
y
Forward Transfer Admittance
vs. Drain Current
20
V
DS
= 10 V
Pulse Test
25°C
75°C
T
C
= –25°C
20
0.5
500
0.5
10
Reverse Drain Current I
DR
(A)
200
10
1
5
0.2
50
100
5
2
R
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
μ
s, V
GS
= 0
Ta = 25°C
Pulse Test
20
20
1,000
20
50
Drain to Source Voltage V
DS
(V)
C
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
100
V
= 0
f = 1 MHz
Crss
Coss
Ciss
10,000
10
1,000
80
200
D
D
Dynamic Input Characteristics
800
200
40
120
160
400
600
20
16
4
0
8
12
G
G
0
V
GS
V
DS
V
DD
= 400 V
250 V
100 V
I
D
= 15 A
Gate Charge Qg (nc)
250 V
400 V
V
DD
= 100 V
500
Drain Current I
D
(A)
S 200
5
50
100
10
Switching Characteristics
t
d (off)
0.5
0.2
1
t
f
t
r
t
d (on)
V
GS
= 10 V, PW = 2
μ
s
duty 1%, V
DD
=
2
10
5
20
<
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PDF描述 |
|---|---|
| 2SK1412 | High-Voltage High-Speed Switching Applications |
| 2SK1412LS | Ultrahigh-Speed Switching Applications |
| 2SK1413 | High-Voltage High-Speed Switching Applications |
| 2SK1414 | High-Voltage High-Speed Switching Applications |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1405-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1406 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK1410-202 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK1412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:High-Voltage High-Speed Switching Applications |
| 2SK1412LS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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