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參數(shù)資料
| 型號： | 2SK1404 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220FM, 3 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 63K |
| 代理商： | 2SK1404 |
2SK1404
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
600
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 500 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
1.1
1.5
I
D = 2.5 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
3.0
5.0
—
S
I
D = 2.5 A, VDS = 10 V *
1
Input capacitance
Ciss
—
1000
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
250
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
45
—
pF
Turn-on delay time
t
d(on)
—
12
—
ns
I
D = 2.5 A, VGS = 10 V,
Rise time
t
r
—
45
—
ns
R
L = 12
Turn-off delay time
t
d(off)
—
105
—
ns
Fall time
t
f
—55
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
500
—
ns
I
F = 5 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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PDF描述 |
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| 2SK1404 | 5 A, 600 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| 2SK1520-E | 30 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1519-E | 30 A, 450 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1572 | 3 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1404(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1404-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1405 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1405-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1406 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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