參數(shù)資料
型號(hào): 2SK1402
元件分類: JFETs
英文描述: 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220AB, 3 PIN
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 63K
代理商: 2SK1402
2SK1402, 2SK1402A
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
K1402
V
(BR)DSS
600
V
I
D = 10 mA, VGS = 0
breakdown voltage
K1402A
650
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
K1402
I
DSS
250
AV
DS = 500 V, VGS = 0
drain current
K1402A
V
DS = 550 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source K1402
R
DS(on)
1.8
2.4
I
D = 2 A, VGS = 10 V *
1
on state resistance
K1402A
2.0
2.6
Forward transfer admittance
|yfs|
2.2
3.5
S
I
D = 2 A, VDS = 10 V *
1
Input capacitance
Ciss
600
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
140
pF
f = 1 MHz
Reverse transfer capacitance
Crss
25
pF
Turn-on delay time
t
d(on)
—8
—ns
I
D = 2 A, VGS = 10 V,
Rise time
t
r
30
ns
R
L = 15
Turn-off delay time
t
d(off)
—60
ns
Fall time
t
f
—35
ns
Body to drain diode forward
voltage
V
DF
0.9
V
I
F = 4 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
300
ns
I
F = 4 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2SK1402 2.4 ohm, POWER, FET, TO-220AB
2SK1405-E 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1405 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1405 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1427 10 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1402A 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
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2SK1402A-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
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