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參數資料
| 型號： | 2SK1402-E |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-46, 3 PIN |
| 文件頁數： | 3/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 2SK1402-E |
2SK1402, 2SK1402A
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
60
40
20
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
10
1
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
3
0.3
1
0.1
3
10
30
100
300
1,000
0.05
Ta = 25
°C
100
s
1 ms
PW
=
10
ms
(1
shot
pulse)
DC
Operation
(T
C =
25
°C)
Operation
in
thi
s area
is
limited
by
R
DS
(on)
10
s
2SK1402
2SK1402A
5
20
50
Drain to Source Voltage VDS (V)
Typical Output Characteristics
4
1
10
30
40
0
2
3
Drain
Current
I
D
(A)
VGS = 3.5 V
Pulse Test
4.5 V
6 V
5 V
4 V
10 V
5
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
4
1
26
8
0
2
3
TC = –25°C
25
°C
VDS = 20 V
Pulse Test
75
°C
20
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
16
4
412
16
0
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Pulse Test
2 A
ID = 5 A
1 A
50
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
20
2
1
5
10
Static Drain to Source on State
Resistance vs. Drain Current
Pulse Test
0.5
10
VGS = 10 V
15 V
0.2
0.5
1
2
5
20
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK1403 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 8A 3PIN TO-P - Rail/Tube |
| 2SK1403A | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1403A-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1404 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 600V 5A 3PIN TO-220FM - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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