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參數(shù)資料
| 型號(hào)： | 2SK1401 |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SK1401 |
2SK1401, 2SK1401A
6
500
120
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns) 200
20
0.5
2
10
5
50
100
Body to Drain Diode Reverse
Recovery Time
Pulse Test
di/dt = 100 A/
s, V
GS = 0
Ta = 25°C
0.2
10
5
10,000
1,000
20
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
10
30
40
5
100
Typical Capacitance vs.
Drain to Source Voltage
0
Crss
Coss
Ciss
VGS = 0
f = 1 MHz
500
40
100
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Dynamic Input Characteristics
400
100
20
60
80
0
200
300
VDS
300 V
20
16
4
0
8
12
VDD = 300 V
200 V
100 V
ID = 15 A
200 V
VDD = 100 V
VGS
Gate
to
Source
Voltage
V
GS
(V)
500
120
Drain Current ID (A)
Switching
Time
t
(ns)
200
20
0.5
2
10
5
50
100
0.2
10
5
Switching Characteristics
tf
tr
td (on)
VGS = 10 V, PW = 2 s
duty
1%, VDD
30 V
td (off)
=
.
<
=
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1402A | 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 2.4 ohm, POWER, FET, TO-220AB |
| 2SK1405-E | 15 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1401A | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1401A(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1402 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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