參數(shù)資料
型號: 2SK1399
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
中文描述: N溝道MOS場效應(yīng)晶體管高速開關(guān)
文件頁數(shù): 4/8頁
文件大?。?/td> 46K
代理商: 2SK1399
Data Sheet D14770EJ2V0DS00
4
2SK1399
Pulse measurement
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
20
V
GS
- Gate to Source Voltage - V
R
D
10
0
5
10
0
1
2
3
4
6
7
8
9
I
D
= 100 mA
10 mA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
2
5
10
20
60
I
D
- Drain Current - mA
R
D
100
1
2
0.6
0
5
10
20
50
4.0 V
V
GS
= 2.5 V
Pulse
measurement
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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2SK1400A 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching