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參數(shù)資料
| 型號(hào)： | 2SK1382 |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 100 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 390K |
| 代理商： | 2SK1382 |
2SK1382
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
—
±100
nA
Drain cutoff current
IDSS
VDS = 100 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
100
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 30 A
—
20
29
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 30 A
—
15
20
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 30 A
30
47
—
S
Input capacitance
Ciss
—
7000
—
Reverse transfer capacitance
Crss
—
400
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
2700
—
pF
Rise time
tr
—
16
—
Turnon time
ton
—
55
—
Fall time
tf
—
80
—
Switching time
Turnoff time
toff
—
280
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
176
—
Gatesource charge
Qgs
—
132
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 80 V, VGS = 10 V, ID = 60 A
—
44
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
60
A
Pulse drain reverse current
(Note 1)
IDRP
—
240
A
Forward voltage (diode)
VDSF
IDR = 60 A, VGS = 0 V
—
1.6
V
Reverse recovery time
trr
—
300
—
ns
Reverse recovered charge
Qrr
IDR = 60 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
0.75
—
μC
Marking
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK1382
TOSHIBA
JAPAN
Lot No.
Note 2
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1401 | 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1402A | 4 A, 650 V, 2.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 4 A, 600 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1402 | 2.4 ohm, POWER, FET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1382(Q) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH - Rail/Tube 制造商:Toshiba 功能描述:Nch 100V 60A 0.02@10V TO3P(L) 制造商:Toshiba 功能描述:Nch 100V 60A 0.02@10V TO3P(L) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 100V 60A TO-3PL 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-3PL |
| 2SK1382_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS) |
| 2SK1382_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Relay Drive, Motor Drive and DC−DC Converter Applications |
| 2SK1382Q | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 100V 60A 3-Pin(3+Tab) TO-3PL |
| 2SK1384 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL ENHANCEMENT TYPE MOS-FET |
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