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參數(shù)資料
| 型號： | 2SK1358 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | FET, Silicon N Channel MOS Type(for High Speed, High Current DC-DC Converter, Relay Drive and Motor Diver) |
| 中文描述： | 場效應(yīng)管，硅?頻道馬鞍山類型（高速，大電流的DC - DC轉(zhuǎn)換器，繼電器驅(qū)動器和電機(jī)潛水員） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 569K |
| 代理商： | 2SK1358 |
TOSHIBA
TOSHIBA CORPORATION
1/6
Discrete Semiconductors
2SK1358
Field Effect Transistor
Silicon N Channel MOS Type (
π
-MOS II.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
Low Drain-Source ON Resistance
- R
DS(ON)
= 1.1
High Forward Transfer Admittance
-
Y
fs
= 4.0S (Typ.)
Low Leakage Current
- I
DSS
= 300
μ
A (Max.) @ V
Enhancement-Mode
- V
th
= 1.5 ~ 3.5V @ V
Absolute Maximum Ratings (Ta = 25
(Typ.)
DS
= 720V
DS
= 10V, I
D
= 1mA
°
This transistor is an electrostatic sensitive device. Please handle with care.
C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DSS
900
V
Drain-Gate Voltage (R
GS
= 20k
)
V
DGR
900
V
Gate-Source Voltage
V
GSS
±
30
V
Drain Current
DC
I
D
9
A
Pulse
I
DP
27
Drain Power Dissipation
(Tc = 25
°
C)
P
D
150
W
Channel Temperature
T
ch
150
°
C
Storage Temperature Range
T
stg
-55 ~ 150
°
C
Thermal Characteristics
CHARACTERISTIC
SYMBOL
MAX.
UNIT
Thermal Resistance, Channel to Case
R
th(ch-c)
R
th(ch-a)
0.833
°
°
C/W
Thermal Resistance, Channel to Ambient
50
C/W
Unit in mm
Industrial Applications
相關(guān)PDF資料 |
PDF描述 |
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| 2SK1359 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
| 2SK1363 | 2SK1363 |
| 2SK1365 | FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply) |
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| 2SK1378 | 2SK1378 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1359 | 功能描述:MOSFET N-CH 1KV 5A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK1359(F) | 功能描述:MOSFET N-Ch FET RDS 3.0 Ohm IDSS 300uA VDSS 1kV RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK1359_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type (?#8722;MOSII.5) DC−DC Converter and Motor Drive Applications |
| 2SK1359_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:DC−DC Converter and Motor Drive Applications |
| 2SK1359F | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTORS /POWER MOSFET/NCH 700V |
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