參數(shù)資料
型號(hào): 2SK1342
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET
中文描述: 硅N溝道場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 6/9頁(yè)
文件大小: 49K
代理商: 2SK1342
2SK1342
6
5,000
0.2
Reverse Drain Current I
DR
(A)
5
R
r
2,000
200
1
50
500
1,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
μ
s,
Ta = 25°C, V
GS
= 0
Pulse Test
100
0.5
2
0.1
10
10,000
20
50
Drain to Source Voltage V
DS
(V)
C
100
10
30
40
Typical Capacitance vs.
Drain to Source Voltage
0
10
Crss
Coss
Ciss
V
= 0
f = 1 MHz
1,000
1,000
40
100
Gate Charge Qg (nc)
D
D
800
20
60
0
80
600
400
200
V
DD
= 600 V
V
DS
Dynamic Input Characteristics
400 V
250 V
V
GS
20
G
G
16
12
8
4
0
I
D
= 8 A
V
DD
= 250 V
400 V
600 V
0.5
10
Drain Current I
D
(A)
S
500
50
0.2
1
5
10
100
200
0.1
20
2
Switching Characteristics
t
f
t
d (off)
t
r
5
t
d (on)
V
GS
= 10 V, V
DD
30 V
PW = 5
μ
s, duty < 1%
=
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