參數(shù)資料
型號(hào)： 2SK1342
元件分類： JFETs
英文描述： 8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 7/11頁
文件大?。?/td> 64K
代理商： 2SK1342
2SK1342
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
900
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage drain current I
DSS
—
250
AV
DS = 720 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
1.2
1.6
I
D = 4 A, VGS = 10 V *
1
Forward transfer admittance
|yfs|
3.5
5.5
—
S
I
D = 4 A, VDS = 20 V *
1
Input capacitance
Ciss
—
1730
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
700
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
310
—
pF
Turn-on delay time
t
d(on)
—
25
—
ns
I
D = 4 A, VGS = 10 V,
Rise time
t
r
—
135
—
ns
R
L = 7.5
Turn-off delay time
t
d(off)
—
185
—
ns
Fall time
t
f
—
130
—
ns
Body to drain diode forward
voltage
V
DF
—
0.9
—
V
I
F = 8 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
900
—
ns
I
F = 8 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
相關(guān)PDF資料
PDF描述
2N5877 10 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1342-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFET - Rail/Tube 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 900V 6A TO-3P
2SK1345 制造商:Toshiba America Electronic Components 功能描述:
2SK1346 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1348 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SK1348
2SK135 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:LOW FREQUENCY POWER AMPLIFIER
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