參數(shù)資料
型號(hào): 2SK1340-E
元件分類: JFETs
英文描述: 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
封裝: LEAD FREE, SC-65, TO-3P, 3 PIN
文件頁數(shù): 4/9頁
文件大小: 98K
代理商: 2SK1340-E
2SK1340
Rev.3.00 May 15, 2006 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
900
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
5
A
Drain peak current
ID(pulse)
*1
12
A
Body to drain diode reverse drain current
IDR
5
A
Channel dissipation
Pch
*2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
900
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
±10
A
VGS =
±25 V, VDS = 0
Zero gate voltage drain current
IDSS
250
A
VDS = 720 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
3.0
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
resistance
RDS(on)
3.0
4.0
ID = 3 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
2.0
3.2
S
ID = 3 A, VDS = 20 V *
3
Input capacitance
Ciss
740
pF
Output capacitance
Coss
305
pF
Reverse transfer capacitance
Crss
150
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
15
ns
Rise time
tr
70
ns
Turn-off delay time
td(off)
90
ns
Fall time
tf
90
ns
ID = 3 A, VGS = 10 V,
RL = 10
Body to drain diode forward voltage
VDF
0.9
V
IF = 5 A, VGS = 0
Body to drain diode reverse recovery
time
trr
900
ns
IF = 5 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
相關(guān)PDF資料
PDF描述
2SK1341-E 6 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1401-E 15 A, 300 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
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