參數(shù)資料
型號: 2SK1337
廠商: Hitachi,Ltd.
英文描述: Silicon N-Channel MOS FET(N溝道MOSFET)
中文描述: 硅N溝道場效應(yīng)晶體管(不適用溝道MOSFET的)
文件頁數(shù): 2/7頁
文件大?。?/td> 49K
代理商: 2SK1337
2SK1337
2
Absolute Maximum Ratings
(Ta = 25
q
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch
100
V
Gate to source voltage
r
20
V
Drain current
0.3
A
Drain peak current
1
1.2
A
Body to drain diode reverse drain current
0.3
A
Channel dissipation
400
mW
Channel temperature
Tch
150
q
C
Storage temperature
Notes 1. PW
d
10
P
s, duty cycle
d
1%
Tstg
–55 to +150
q
C
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
100
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
20
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
r
10
P
A
V
GS
=
r
16 V, V
DS
= 0
V
DS
= 80 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 0.2 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
50
P
A
V
GS(off)
R
DS(on)
1.0
2.0
V
Static drain to source on state
resistance
3.5
4.5
:
1
4.0
6.5
:
I
D
= 0.2 A, V
GS
= 4 V *
I
D
= 0.2 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Forward transfer admittance
|yfs|
0.22
0.35
S
1
Input capacitance
Ciss
35
pF
Output capacitance
Coss
14
pF
Reverse transfer capacitance
Crss
3.5
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
2
ns
I
D
= 0.2 A, V
GS
= 10 V,
R
L
= 150
:
Rise time
4
ns
Turn-off delay time
17
ns
Fall time
15
ns
Body to drain diode forward
voltage
0.9
V
I
F
= 0.3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
80
ns
I
F
= 0.3 A, V
GS
= 0,
di
F
/dt = 50 A/
P
s
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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