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參數(shù)資料
| 型號(hào)： | 2SK1335S |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | 2SK1335S |
2SK1335(L), 2SK1335(S)
2
Absolute Maximum Ratings
(Ta = 25
q
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch*
200
V
Gate to source voltage
r
20
V
Drain current
3
A
Drain peak current
1
12
A
Body to drain diode reverse drain current
3
A
Channel dissipation
2
20
W
Channel temperature
Tch
150
q
C
Storage temperature
Notes 1. PW
d
10
P
s, duty cycle
d
1%
2. Value at T
C
= 25
q
C
Tstg
–55 to +150
q
C
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
200
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
20
—
—
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
r
10
P
A
V
GS
=
r
16 V, V
DS
= 0
V
DS
= 160 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 2 A, V
GS
= 10 V *
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
100
P
A
V
GS(off)
R
DS(on)
2.0
—
4.0
V
Static drain to source on state
resistance
—
0.5
0.8
:
1
Forward transfer admittance
|yfs|
1.5
2.3
—
S
I
D
= 2 A, V
DS
= 10 V *
V
DS
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
—
380
—
pF
Output capacitance
Coss
—
150
—
pF
Reverse transfer capacitance
Crss
—
35
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
10
—
ns
I
D
= 2 A, V
GS
= 10 V,
R
L
= 15
:
Rise time
—
27
—
ns
Turn-off delay time
—
30
—
ns
Fall time
—
20
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 3 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
120
—
ns
I
F
= 3 A, V
= 0,
di
F
/dt = 50 A/
P
s
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