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參數(shù)資料
| 型號： | 2SK1334BYTL-E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | SC-62, UPAK -3 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 77K |
| 代理商： | 2SK1334BYTL-E |
2SK1334
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
1.2
0.8
0.4
0
50
100
150
Ambient Temperature Ta (
°C)
Power vs. Temperature Derating
Channel
Dissipation
Pch
(W)
Test Condition: When using alumina
ceramic board
(12.5
× 20 × 0.7 mm)
5
1
0.1
0.005
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
2
0.02
1
3
30
300
Ta = 25
°C
10
s
100
s
DC
Operation
(T
C =
25
°C)
Operation
in
this
area
is limited
by
R DS
(on)
1 ms
PW
=
10
m
s (1
Shot)
0.2
0.5
0.05
0.01
2.0
820
Drain to Source Voltage VDS (V)
Typical Output Characteristics
1.6
0.4
412
16
Pulse Test
0
0.8
1.2
5 V
VGS = 3 V
Drain
Current
I
D
(A)
4 V
6 V
7 V
8 V
10 V
2.0
4
10
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
1.6
0.4
26
8
–25
°C
0
0.8
1.2
VDS = 10 V
Pulse Test
75
°C
TC = 25°C
20
820
Drain to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
16
4
412
16
0
8
12
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
1 A
ID = 2 A
Pulse Test
0.5 A
50
0.2
5
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
20
1
0.1
0.5
2
0.05
5
10
Static Drain to Source on State
Resistance vs. Drain Current
2
0.5
1
15 V
VGS = 10 V
Pulse Test
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK1336 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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