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參數(shù)資料
| 型號： | 2SK1306-E |
| 元件分類： | JFETs |
| 英文描述： | 15 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 83K |
| 代理商： | 2SK1306-E |
2SK1306
Rev.2.00 Sep 07, 2005 page 4 of 6
80
Case Temperature TC (°C)
120
40
0
0.1
0.2
0.3
0.4
0.5
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
ID = 20 A
Pulse Test
VGS = 4 V
VGS = 10 V
20 A
10 A
5 A
10 A
5 A
Forward Transfer Admittance
vs. Drain Current
50
20
10
5
2
1
0.2
0.5
1.0
2
5
20
Drain Current ID (A)
10
Forward
Transfer
Admittance
y
fs
(S)
0.5
TC = 25°C
VDS = 10 V
Pulse Test
–25
°C
75
°C
500
100
50
20
10
5
0.2
0.5
2
20
Reverse Drain Current IDR (A)
5
1.0
10
Body to Drain Diode Reverse
Recovery Time
Reverse
Recovery
Time
t
rr
(ns)
200
di/dt = 50 A/
s, Ta = 25
°C
VGS = 0
Pulse Test
Typical Capacitance vs.
Drain to Source Voltage
10000
1000
100
10
Capacitance
C
(pF)
010
20
50
Drain to Source Voltage VDS (V)
30
40
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
100
80
60
40
20
0
20
60
80
Gate Charge Qg (nc)
40
20
16
12
8
4
Dynamic Input Characteristics
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
100
0
VDS
VGS
VDD = 25 V
50 V
80 V
ID = 15 A
VDD = 80 V
50 V
25 V
Switching Characteristics
500
200
100
50
10
5
0.2
0.5
2
20
Drain Current ID (A)
5
1
10
Switching
Time
t
(ns)
20
td(off)
td(on)
tf
tr
VGS = 10 V, VDD = 30 V
PW = 2
s, duty ≤ 1 %
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK1307 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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| 2SK1308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1308A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK1310 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER) |
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