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參數(shù)資料
| 型號： | 2SK1299(L) |
| 元件分類： | JFETs |
| 英文描述： | 0.45 ohm, POWER, FET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大小： | 57K |
| 代理商： | 2SK1299(L) |
2SK1299(L), 2SK1299(S)
5
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
6
Gate to Source Voltage VGS (V)
8
4
2
010
0.8
1.2
1.6
2.0
0
0.4
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
Pulse Test
ID = 5 A
2 A
1 A
2
Drain Current ID (A)
5
1
0.5
20
0.2
0.5
1
2
5
0.2
0.1
0.05
10
Static Drain to Source on State
Resistance vs. Drain Current
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
VGS = 4 V
10 V
Pulse Test
80
Case Temperature TC (°C)
120
40
0
0.1
0.2
0.3
0.4
0.5
–40
0
160
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
ID = 5 A
Pulse Test
VGS = 4 V
10 V
2 A
1 A
5 A
2 A
1 A
Forward Transfer Admittance
vs. Drain Current
10
5
2
1
0.5
0.2
0.05
1.0
0.2
0.5
1
5
Drain Current ID (A)
2
Forward
Transfer
Admittance
yfs
(S)
0.1
TC = –25°C
VDS = 10 V
Pulse Test
25°C
75°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1299(S) | 0.45 ohm, POWER, FET |
| 2SK1302-E | 20 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK1303-E | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1303 | 30 A, 100 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1304 | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1299S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1300 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1300-E | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 100V 10A 3-Pin(3+Tab) TO-220AB |
| 2SK1301 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1301(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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