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參數(shù)資料
| 型號： | 2SK1215IGETL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | SC-70, CMPAK-3 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 262K |
| 代理商： | 2SK1215IGETL |
2SK1215
Rev.2.00 Aug 10, 2005 page 3 of 5
150
100
50
Ambient Temperature Ta (°C)
0
600
400
200
Maximum Channel Dissipation Curve
Channel
Power
Dissipation
P
ch
(mW)
10
2468
Drain to Source Voltage VDS (V)
0
10
8
6
4
2
Typical Output Characteristics
Drain
Current
I
D
(mA)
VGS = 0 V
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–0.7
–0.8
–2.0
–1.6
–1.2
–0.8
–0.4
0
Gate to Source Voltage VGS (V)
10.0
8.0
6.0
4.0
2.0
0
Typical Transfer Characteristics
Drain
Current
I
D
(mA)
VDS = 10 V
F
E
610
48
2
Drain to Source Voltage VDS (V)
0
20
16
12
8
4
Forward Transfer Admittance vs.
Drain to Source Voltage
Forward
Transfer
Admittance
y
fs
(mS)
VGS = 0
f = 1 kHz
0.5
2
20
1.0
10
5
0.2
Drain Current ID (mA)
100
50
20
10
5
2
1
Forward Transfer Admittance vs.
Drain Current
Forward
Transfer
Admittance
y
fs
(mS)
VDS = 10 V
f = 1 kHz
210
20
5
1.0
0.5
Drain to Source Voltage VDS (V)
20
10
5
2
1.0
0.5
Input Capacitance vs.
Drain to Source Voltage
Input
Capacitance
C
iss
(pF)
VGS = 0
f = 1 MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1215IGFTL | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel MOS FET |
| 2SK1217 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247 |
| 2SK1217-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 8A I(D) | TO-247 |
| 2SK1217-01R | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK1221 | 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-Channel Silicon Power MOS-FET |
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