參數(shù)資料
型號: 2SK11
英文描述: TRANSISTOR | JFET | N-CHANNEL | 6.5MA I(DSS) | TO-17
中文描述: 晶體管|場效應(yīng)| N溝道| 6.5MA我(直)|至17
文件頁數(shù): 4/9頁
文件大?。?/td> 47K
代理商: 2SK11
2SK1167, 2SK1168
4
Power vs. Temperature Derating
150
100
50
0
Channel
Dissipation
Pch
(W)
50
100
150
Case Temperature TC (°C)
Maximum Safe Operation Area
100
30
10
3
0.1
1
3
10
30
100
300
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
1.0
0.3
Operation in this area
is limited by RDS (on)
1 ms
10
s
100
s
Ta= 25°C
PW
=
10
ms
(1Shot)
DC
Operation
(T
C =25°C)
2SK1168
2SK1167
Typical Output Characteristics
20
12
8
4
0
4
8
12
20
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
6 V
16
VGS = 4V
Pulse Test
4.5 V
5.0 V
5.5 V
10 V
Typical Transfer Characteristics
20
16
8
4
0
24
6
8
10
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
12
TC = 25°C
75°C
–25°C
VDS = 20 V
Pulse Test
相關(guān)PDF資料
PDF描述
2SK1101-01M Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1102-01M TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-218VAR
2SK1103O TRANSISTOR | JFET | N-CHANNEL | 200UA I(DSS) | TO-236
2SK1103P Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1103Q TRANSISTOR | JFET | N-CHANNEL | 1MA I(DSS) | TO-236
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1101 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL SILICON POWER MOS-FET
2SK1101-01M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-220AB
2SK1101-01MR 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET
2SK1101MR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL SILICON POWER MOS-FET
2SK1102 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR