參數(shù)資料
型號: 2SK1186
廠商: SANKEN ELECTRIC CO LTD
元件分類: JFETs
英文描述: MOSFET
中文描述: 9 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220F, FM20, 3 PIN
文件頁數(shù): 1/1頁
文件大小: 34K
代理商: 2SK1186
Absolute Maximum Ratings
Electrical Characteristics
Symbol
Ratings
Unit
V
DSS
100
V
(BR) DSS
100
V
I
D
= 250
μ
A, V
GS
= 0V
V
V
GSS
±
20
I
GSS
±
500
nA
V
GS
=
±
20V
V
I
D
±
9
I
DSS
250
μ
A
V
DS
= 100V, V
GS
= 0V
A
I
D (pulse)
(Ta = 25
o
C)
(Ta = 25
o
C)
V
TH
2.0
4.0
V
V
DS
= 10V, I
D
= 250
μ
A
A
P
D
30 (Tc = 25
o
C)
Re
(yfs)
2.4
3.7
S
V
DS
= 10V, I
D
= 4.5A
W
E
AS
32
R
DS (on)
0.24
0.27
V
GS
= 10V, I
D
= 4.5A
mJ
Tch
150
: V
DD
= 25V, L = 600
μ
H, I
L
= 9.0A, unclamped,
See Figure 1 on Page 5.
Ciss
350
pF
V
DS
= 25V, f = 1.0MHz,
V
GS
= 0V
I
D
= 4.5A, V
DD
= 50V,
V
GS
= 10V,
See Figure 2 on Page 5.
o
C
Tstg
55 to +150
Coss
130
pF
o
C
t
on
60
ns
t
off
40
ns
Symbol
Unit
Conditions
Ratings
typ
max
min
16
*
0
2
10
10
6
4
0
V =
GS
6.5V
6V
5.5V
5V
V 10V
GS
=
0
0
1
6
10
0.1
0.2
0.3
0.4
50
0
0
50
100
150
0.1
0.2
0.3
0.4
0.5
5
10
20
V 10V
DS
=
25
o
C
125
o
C
0.05
0.3
0.1
0.5
I
D
(A)
1
10
0.5
1
10
V 10V
DS
=
25
o
C
125
o
C
0
10
10
20
30
40
50
50
100
500
1000
V =
GS
f =
Ciss
Coss
Crss
0.5
5
10
50 100
0.1
0.5
1
5
10
50
D
I
D
(pulse) max
D
I max
R
DS(ON
100
μ
s
DCOPERATON
10ms1ms
00
0.2
0.4
0.6
V
SD
(V)
0.8
1.4
2
4
10
V =
GS
5V
0
2
4
6
8
10
0
2
4
6
I =
D
I =
D
V 10V
GS
=
I =
D
T =
o
C
C
T =
o
C
C
0
10
20
30
0
50
100
150
Wt niiehasn
Without heatsink
2
8
4
V
DS
(V)
6
8
10V
10
6
4
0
2
8
2
3
4
5
7
8
9
5
5
6
8
1.0
1.2
10V
1
2SK1186
External dimensions 1 ...... FM20
±
36 (Tch 150
o
C)
(Tc=25
o
C)
R
D
)
R
D
)
R
(
(
C
Ta (
o
C)
V
D
V
DS
I
D
Characteristics
I
D
Re
(yfs)
Characteristics
V
DS
Capacitance
Characteristics
V
SD
I
DR
Characteristics
Ta
P
D
Characteristics
Safe Operating Area
V
GS
V
DS
Characteristics
T
C
R
DS (ON)
Characteristics
V
GS
I
D
Characteristics
I
D
R
DS (ON)
Characteristics
V
DS
(V)
V
DS
(V)
I
D
I
D
P
D
Tc (
o
C)
V
GS
(V)
V
GS
(V)
I
D
(A)
I
D
I
D
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