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參數(shù)資料
| 型號： | 2SK1170 |
| 元件分類： | JFETs |
| 英文描述： | 0.27 ohm, POWER, FET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SK1170 |
2SK1169, 2SK1170
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1169 V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1170
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1169 I
DSS
—
250
A
V
DS = 360 V, VGS = 0
drain current
2SK1170
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1169 R
DS(on)
—
0.20
0.25
I
D = 10 A, VGS = 10 V *
1
on state resistance
2SK1170
—
0.22
0.27
Forward transfer admittance
|yfs|
10
16
—
S
I
D = 10 A, VDS = 10 V *
1
Input capacitance
Ciss
—
2800
—
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
—
780
—
pF
f = 1 MHz
Reverse transfer capacitance
Crss
—
90
—
pF
Turn-on delay time
t
d(on)
—
32
—
ns
I
D = 10 A, VGS = 10 V,
Rise time
t
r
—
115
—
ns
R
L = 3
Turn-off delay time
t
d(off)
—
200
—
ns
Fall time
t
f
—90
—
ns
Body to drain diode forward
voltage
V
DF
—
1.0
—
V
I
F = 20 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
500
—
ns
I
F = 20 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1170-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3P |
| 2SK1171 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 |
| 2SK1171-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 |
| 2SK1172 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK1172-01 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3.5A I(D) | TO-247 |
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