參數(shù)資料
型號: 2SK1169
元件分類: JFETs
英文描述: 20 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 10/11頁
文件大?。?/td> 64K
代理商: 2SK1169
2SK1169, 2SK1170
6
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/
s, Ta = 25°C
VGS = 0
Pulse Test
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
5,000
2,000
500
200
100
50
1,000
0.5
1.0
2
5
10
20
50
Typical Capacitance
vs. Drain to Source Voltage
100
010
20
30
40
50
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Coss
Ciss
Crss
10
VGS = 0
f = 1 MHz
1,000
10,000
Dynamic Input Characteristics
500
400
300
200
100
0
40
80
120
160
200
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
20
16
12
8
4
0
Gate
to
Source
Voltage
V
GS
(V)
VDD = 100 V
V DD = 400 V
250 V
VDS
ID = 20 A
400 V
VGS
100 V
Switching Characteristics
500
100
50
20
10
5
200
Switching
Time
t
(ns)
0.5
1.0
2
5
10
20
50
Drain Current ID (A)
VGS = 10 V VDD = 30 V
PW = 2
s, duty < 1%
td (off)
tr
tf
td (on)
相關(guān)PDF資料
PDF描述
2SK1170 20 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK117-GR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-Y N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-Y N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
2SK117-GR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
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