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參數(shù)資料
| 型號： | 2SK1166 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 3/7頁 |
| 文件大小： | 53K |
| 代理商： | 2SK1166 |
2SK1165, 2SK1166
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
breakdown voltage
2SK1165 V
(BR)DSS
450
—
—
V
I
D
= 10 mA, V
GS
= 0
2SK1166
500
Gate to source breakdown
voltage
V
(BR)GSS
±
30
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
±
10
250
μ
A
μ
A
V
GS
=
±
25 V, V
DS
= 0
V
DS
= 360 V, V
GS
= 0
Zero gate voltage
drain current
2SK1165 I
DSS
—
—
2SK1166
V
DS
= 400 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 6 A, V
GS
= 10 V *
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
Static Drain to source
on state resistance
2SK1165 R
DS(on)
—
0.40
0.55
1
2SK1166
—
0.45
0.60
Forward transfer admittance
|yfs|
6.0
10
—
S
I
D
= 6 A, V
DS
= 10 V *
V
= 10 V, V
GS
= 0,
f = 1 MHz
1
Input capacitance
Ciss
—
1450
—
pF
Output capacitance
Coss
—
410
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
Turn-on delay time
t
d(on)
—
20
—
ns
I
D
= 6 A, V
GS
= 10 V,
R
L
= 5
Rise time
t
r
t
d(off)
t
f
V
DF
—
70
—
ns
Turn-off delay time
—
120
—
ns
Fall time
—
60
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 12 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse test
t
rr
—
450
—
ns
I
F
= 12 A, V
= 0,
di
F
/dt = 100 A/
μ
s
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1166(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1166-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1167 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 15A 3PIN TO-3P - Rail/Tube |
| 2SK1167-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS 制造商:Renesas 功能描述:Trans MOSFET N-CH 450V 15A 3-Pin(3+Tab) TO-3P |
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