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參數(shù)資料
| 型號： | 2SK1164-E |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 176K |
| 代理商： | 2SK1164-E |
2SK1163, 2SK1164
Rev.2.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
2SK1163
450
Drain to source voltage
2SK1164
VDSS
500
V
Gate to source voltage
VGSS
±30
V
Drain current
ID
11
A
Drain peak current
ID(pulse)*
1
40
A
Body to drain diode reverse drain current
IDR
11
A
Channel dissipation
Pch*
2
100
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
2SK1163
450
Drain to source
breakdown voltage
2SK1164
V(BR)DSS
500
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±30
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±25 V, VDS = 0
2SK1163
VDS = 360 V, VGS = 0
Zero gate voltage drain
current
2SK1164
IDSS
—
250
A
VDS = 400 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
2.0
—
3.0
V
ID = 1 mA, VDS = 10 V
2SK1163
—
0.55
0.7
Static drain to source on
state resistance
2SK1164
RDS(on)
—
0.60
0.8
ID = 5 A, VGS = 10 V *
3
Forward transfer admittance
|yfs|
5.0
8.0
—
S
ID = 5 A, VDS = 10 V *
3
Input capacitance
Ciss
—
1150
—
pF
Output capacitance
Coss
—
340
—
pF
Reverse transfer capacitance
Crss
—
55
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
17
—
ns
Rise time
tr
—
60
—
ns
Turn-off delay time
td(off)
—
95
—
ns
Fall time
tf
—
50
—
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body to drain diode forward voltage
VDF
—
1.0
—
V
IF = 11 A, VGS = 0
Body to drain diode reverse recovery
time
trr
—
400
—
ns
IF = 11 A, VGS = 0,
diF/dt = 100 A/
s
Note:
3. Pulse test
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1163-E | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1165 | 0.55 ohm, POWER, FET |
| 2SK1166 | 0.6 ohm, POWER, FET |
| 2SK1167-E | 15 A, 450 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1169 | 20 A, 450 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1165 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1165-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK1166 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
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