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參數(shù)資料
| 型號(hào)： | 2SK1163-E |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-65, TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 981K |
| 代理商： | 2SK1163-E |
2SK1163, 2SK1164
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
16
4
10
30
40
Pulse Test
0
8
12
5.5 V
5.0 V
VGS = 4 V
6 V
10 V
4.5 V
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
2
68
0
8
12
VDS = 20 V
Pulse Test
Ta = 25
°C
–25
°C
75
°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
41216
0
4
6
5 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10 A
ID = 2 A
Pulse Test
10
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
5
0.2
1.0
5
20
0.5
1.0
2
Static Drain to Source on State
Resistance vs. Drain Current
0.5
0.1
10
15 V
Pulse Test
VGS = 10 V
120
80
40
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
50
5
1.0
0.05
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
20
2
0.2
13
30
300
Ta = 25
°C
10
s
100
s
1 ms
PW
=
10
ms
(1
shot)
DC
Operation
(T
C =
25
°C)
2SK1163
2SK1164
0.1
0.5
10
Operation
in
thi
s Area
is
Limited
by
R
DS
(on)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK1164 | 0.8 ohm, POWER, FET |
| 2SK1165-E | 12 A, 450 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1166-E | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK1170 | 0.27 ohm, POWER, FET |
| 2SK1190 | POWER, FET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK1164 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK1165(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK1165-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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