參數(shù)資料
型號(hào): 2SK1162-E
元件分類: JFETs
英文描述: 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-65, TO-3P, 3 PIN
文件頁數(shù): 5/9頁
文件大?。?/td> 97K
代理商: 2SK1162-E
2SK1161, 2SK1162
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
20
50
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Typical Output Characteristics
16
4
10
30
40
0
8
12
VGS = 4 V
6 V
10 V
7 V
5 V
Pulse Test
20
410
Gate to Source Voltage VGS (V)
Drain
Current
I
D
(A)
Typical Transfer Characteristics
16
4
26
8
–25
°C
0
8
12
VDS = 20 V
Pulse Test
75
°C
TC = 25°C
10
820
Gate to Source Voltage VGS (V)
Drain
to
Source
Saturation
Voltage
V
DS
(on)
(V)
8
2
412
16
0
4
6
ID = 2 A
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
5 A
Pulse Test
10 A
5
250
Drain Current ID (A)
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(
)
2
0.1
1.0
5
20
0.5
1.0
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 10 V
Pulse Test
15 V
0.2
0.05
10
120
80
40
0
50
100
150
Case Temperature TC (°C)
Channel
Dissipation
Pch
(W)
Power vs. Temperature Derating
100
0.1
10
100
1,000
Drain to Source Voltage VDS (V)
Drain
Current
I
D
(A)
Maximum Safe Operation Area
30
3
1.0
1
3
30
300
Ta = 25
°C
10
s
100
s
1 ms
PW
=
10
m
s (1
shot)
DC
O
peration
(T
C =
25
°C
)
Operation
in
thi
s Area
is
Limited
by
R
D
S (on)
2SK1161
2SK1162
0.3
10
相關(guān)PDF資料
PDF描述
2SK1161-E 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1162 10 A, 500 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1161 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1163 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1164-E 11 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1163 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 450V 11A 3PIN TO-3P - Rail/Tube
2SK1164 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1165 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET
2SK1165(E) 制造商:Renesas Electronics Corporation 功能描述: