參數(shù)資料
型號(hào): 2SK1161
元件分類: JFETs
英文描述: 10 A, 450 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 49K
代理商: 2SK1161
2SK1161, 2SK1162
3
Electrical Characteristics (Ta = 25
°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source
2SK1161 V
(BR)DSS
450
V
I
D = 10 mA, VGS = 0
breakdown voltage
2SK1162
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
——V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±25 V, VDS = 0
Zero gate voltage
2SK1161 I
DSS
250
AV
DS = 360 V, VGS = 0
drain current
2SK1162
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
3.0
V
I
D = 1 mA, VDS = 10 V
Static Drain to source 2SK1161 R
DS(on)
0.6
0.8
I
D = 5 A, VGS = 10 V *
1
on state resistance
2SK1162
0.7
0.9
Forward transfer admittance
|yfs|
4.0
7.0
S
I
D = 5 A, VDS = 10 V *
1
Input capacitance
Ciss
1050
pF
V
DS = 10 V, VGS = 0,
Output capacitance
Coss
280
pF
f = 1 MHz
Reverse transfer capacitance
Crss
40
pF
Turn-on delay time
t
d(on)
15
ns
I
D = 5 A, VGS = 10 V,
Rise time
t
r
60
ns
R
L = 6
Turn-off delay time
t
d(off)
—90
ns
Fall time
t
f
—45
ns
Body to drain diode forward
voltage
V
DF
1.0
V
I
F = 10 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
350
ns
I
F = 10 A, VGS = 0,
di
F/dt = 100 A/s
Note:
1. Pulse test
See characteristic curves of 2SK1157, 2SK1158.
相關(guān)PDF資料
PDF描述
2SK1163 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1164-E 11 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1163-E 11 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK1165 0.55 ohm, POWER, FET
2SK1166 0.6 ohm, POWER, FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK1161(E) 制造商:Renesas Electronics Corporation 功能描述:
2SK1161-E 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET
2SK1162 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET N-CH 500V 10A 3PIN TO-3P - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SK1162-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-3P